Title :
Novel 600-V trench high-conductivity IGBT (Trench HiGT) with short-circuit capability
Author :
Oyama, K. ; Kohno, Y. ; Sakano, J. ; Uruno, J. ; Ishizaka, K. ; Kawase, D. ; Mori, M.
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki, Japan
Abstract :
This paper describes new 600-V trench high-conductivity IGBTs (trench HiGTs) that have lower on-state voltages of 1.42 and 1.55 V at 200 A/cm2 and tough short-circuit capabilities of 5 and 10 μs, respectively. These HiGT have a better trade-off between turn-off losses and on-state voltages than conventional trench IGBTs, even better than planar IGBTs. They also offer a lower reverse transfer capacitances (-50%) than the planar IGBT. The input capacitance obtained were lower (-30% to -60%) than that of a conventional trench IGBT
Keywords :
insulated gate bipolar transistors; 600 V; input capacitance; on-state voltage; power device; reverse transfer capacitance; short-circuit capability; trench high-conductivity IGBT; turn-off loss; Capacitance; Charge carrier processes; Circuits; Conductivity; Insulated gate bipolar transistors; Low voltage; Metalworking machines; Power dissipation; Protection;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934642
