DocumentCode :
3256681
Title :
The 5th generation highly rugged planar IGBT using sub-micron process technology
Author :
Yamashita, Junichi ; Yoshida, Chikako ; Fujii, Chie ; Takanashi, Ken ; Moritano, J.
Author_Institution :
Mitsubishi Electr. Corp., Fukuoka, Japan
fYear :
2001
fDate :
2001
Firstpage :
421
Lastpage :
424
Abstract :
In this paper, a new optimized 600 V class, highly rugged 5th generation IGBT with a very fine ladder structure of n+ emitter realized by sub-micron wafer process technology is proposed and its performance has been demonstrated for the first time
Keywords :
insulated gate bipolar transistors; 600 V; fifth-generation rugged planar IGBT; ladder structure; power device; submicron wafer process technology; Birds; Electrodes; Home appliances; Hybrid electric vehicles; Insulated gate bipolar transistors; Packaging; Power electronics; Power generation; Thyristors; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
ISSN :
1063-6854
Print_ISBN :
4-88686-056-7
Type :
conf
DOI :
10.1109/ISPSD.2001.934643
Filename :
934643
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3256681
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