Title :
Shallow angle implantation for extended trench gate power MOSFETs with super junction structure
Author :
Hattori, Yoshiyuki ; Suzuki, Takashi ; Kodama, Masato ; Hayashii, Eiko ; Uesugi, Tsutomu
Author_Institution :
Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan
Abstract :
In this paper, we present a new deep trench power MOSFET with super junction structure in the drift region, which exhibits strongly improved a relationship between blocking voltage and on-resistance. An accurate control of impurity concentration of n drift region in the trench sidewall is important to achieve the proposed MOSFET. Thus, we also quantitatively analyzed shallow angle ion implantations into trench sidewall by using a macrosize trench model. It was found that 40% ions doped into the incident sidewall and 12% ions were re-implanted into the opposite sidewall at the incident angle of 10 degrees
Keywords :
ion implantation; power MOSFET; blocking voltage; drift region; extended trench gate power MOSFET; impurity concentration control; macrosize trench model; on-resistance; shallow angle ion implantation; super-junction structure; trench sidewall; Automotive applications; Controllability; Implants; Impurities; Ion implantation; MOSFETs; Predictive models; Research and development; Silicon; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934644