DocumentCode :
3256726
Title :
High-voltage power MOSFETs reached almost to the silicon limit
Author :
Kobayashi, T. ; Abe, H. ; Niimura, Y. ; Yamada, T. ; Kurosaki, A. ; Hosen, T. ; Fujihira, T.
Author_Institution :
Matsumoto Branch, Fuji Hitachi Power Semicond. Co. Ltd., Nagano, Japan
fYear :
2001
fDate :
2001
Firstpage :
435
Lastpage :
438
Abstract :
New technologies for non-superjunction high-voltage power MOSFETs have been developed and experimentally confirmed. RON·A achieved are as low as 110% of the silicon limit and RON·QGD achieved are only 50 to 60% of the best data found. Due to the drastic improvement of RON·QGD, the developed devices have improved the power conversion efficiency of a fly-back converter by several percent. The total cost over performance of the power conversion systems can be improved by utilizing the developed technologies
Keywords :
power MOSFET; OGR technology; QPJ technology; fly-back converter; gate-to-drain switching charge; nonsuperjunction high-voltage power MOSFET; on-resistance; power conversion efficiency; silicon limit; Breakdown voltage; Costs; Frequency; MOSFETs; Power conversion; Power semiconductor devices; Power semiconductor switches; Silicon; Switching loss;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
ISSN :
1063-6854
Print_ISBN :
4-88686-056-7
Type :
conf
DOI :
10.1109/ISPSD.2001.934646
Filename :
934646
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3256726
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