600 V CSTBT having ultra low on-state voltage

Author

Takahashi, Hideki ; Aono, Shinji ; Yoshida, Eiji ; Moritani, Junichi ; Hine, Shiro

Author_Institution

ULSI Dev. Center, Mitsubishi Electr. Corp., Fukuoka, Japan

fYear

2001

fDate

2001

Firstpage

445

Lastpage

448

Abstract

This report premieres to reveal remarkable characteristics of the newly invented 600 V CSTBT (Carrier Stored Trench-Gate Bipolar Transistor). The essential significance of the characteristics is that the fabricated 600 V/50 A (equipped with an optimized CS-N layer) can achieve the level that on-state voltage is 1.22 V (J_c=210 A/cm²) at Tj=25°C or 1.15 V at Tj=125°C. Besides, benefited from its advanced structure, the 600 V CSTBT possesses a more efficient trade-off characteristic between on-state voltage and turn-off loss than the conventional TIGBT does. In addition, the 600 V CSTBT can be able to achieve the ideal turn-off capability, 2100 A/cm² or over, by being reinforced by a finer emitter pattern and high-energy boron implant of P base layer

Keywords

insulated gate bipolar transistors; 125 C; 25 C; 50 A; 600 V; CSTBT; carrier stored trench-gate bipolar transistor; on-state voltage; turn-off loss; Analytical models; Bipolar transistors; Boron; Implants; Insulated gate bipolar transistors; Inverters; Low voltage; Switching loss; Systems engineering and theory; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934648

Filename

934648