Title :
600 V CSTBT having ultra low on-state voltage
Author :
Takahashi, Hideki ; Aono, Shinji ; Yoshida, Eiji ; Moritani, Junichi ; Hine, Shiro
Author_Institution :
ULSI Dev. Center, Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
This report premieres to reveal remarkable characteristics of the newly invented 600 V CSTBT (Carrier Stored Trench-Gate Bipolar Transistor). The essential significance of the characteristics is that the fabricated 600 V/50 A (equipped with an optimized CS-N layer) can achieve the level that on-state voltage is 1.22 V (Jc=210 A/cm2) at Tj=25°C or 1.15 V at Tj=125°C. Besides, benefited from its advanced structure, the 600 V CSTBT possesses a more efficient trade-off characteristic between on-state voltage and turn-off loss than the conventional TIGBT does. In addition, the 600 V CSTBT can be able to achieve the ideal turn-off capability, 2100 A/cm2 or over, by being reinforced by a finer emitter pattern and high-energy boron implant of P base layer
Keywords :
insulated gate bipolar transistors; 125 C; 25 C; 50 A; 600 V; CSTBT; carrier stored trench-gate bipolar transistor; on-state voltage; turn-off loss; Analytical models; Bipolar transistors; Boron; Implants; Insulated gate bipolar transistors; Inverters; Low voltage; Switching loss; Systems engineering and theory; Ultra large scale integration;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934648
