A 600 V 200 A low loss high current density trench IGBT for hybrid vehicles

We developed a new low loss high destruction immunity 600 V 200 A trench IGBT for hybrid vehicles. In order to secure high destruction immunity at high current density use caused by chip shrink, we designed a process and a cell on the basis of results of both simulation and 2.5 mm square TEGs (Test Element Groups) experimental results. A 4 um trench pitch, punch-through wafer structure, and local lifetime technology are employed. As a result, the developed IGBT shows an on-state voltage drop of 1.55 V, a fall time of 800 ns, an avalanche capability of over 1 J (at R.T.), and a short circuit immunity of over 40 us. The IGBT is fitted with both a temperature sensor and a current sensor in order to avoid chip failure