DocumentCode :
3257426
Title :
Quantum mechanical effect on determining threshold voltage of trigate FinFET using self-consistent analysis
Author :
Amin, Emran Md ; Baten, Md Zunaid ; Islam, Raisul ; Khosru, Quazi D M
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fYear :
2009
fDate :
23-26 Jan. 2009
Firstpage :
1
Lastpage :
5
Abstract :
The quantum definition based threshold voltage has been evaluated for triple-gate (TG) SOI FinFETs using self-consistent Schrodinger-Poisson solver. Although a new quantum definition of threshold voltage for multiple gate SOI MOSFETs has been provided in recent literature, in-depth analysis of quantization effects on threshold voltage calculation for highly scaled TG FinFETs is yet to be done. In this paper, the electrostatics of the device has been explored from a quantum mechanical point of view for variation in silicon film thickness in the sub 10 nm regime. Also the self-consistent solver, which takes wave function penetration and other quantum mechanical (QM) effects into account, has been utilized here to establish the capacitance-voltage (C-V) characteristics and a modified approach has been proposed for threshold voltage calculation.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; capacitance; electric potential; electrostatics; quantum theory; silicon; silicon-on-insulator; capacitance-voltage characteristics; electrostatics; multiple gate SOI MOSFET; quantization effects; quantum definition based threshold voltage; quantum mechanical effect; self-consistent Schrodinger-Poisson solver; self-consistent analysis; silicon film thickness; threshold voltage calculation; trigate FinFET; triple-gate SOI FinFET; wave function penetration; Capacitance-voltage characteristics; Electrostatics; FinFETs; MOSFETs; Quantization; Quantum mechanics; Semiconductor films; Silicon; Threshold voltage; Wave functions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TENCON 2009 - 2009 IEEE Region 10 Conference
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-4546-2
Electronic_ISBN :
978-1-4244-4547-9
Type :
conf
DOI :
10.1109/TENCON.2009.5396110
Filename :
5396110
Link To Document :
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