Title :
Memory Effects in Si/SiO2/Nano-Crystalline PbS Heterostructures
Author :
Buda, M. ; Stancu, V. ; Pentia, E. ; Botila, T.
Author_Institution :
National Inst. of Material Phys., Bucharest-Magurele
Abstract :
The mechanism of charge storage in p Si/SiO2/nano-crystalline PbS heterostructures is investigated using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at different frequencies. The nanocrystalline thin PbS films were obtained using the chemical bath deposition method with a shorter reaction time and without doping element in the reducing bath. The C-V curves show hysteresis indicating charge storage with a maximum charge density of 3 times 1011 cm-2 for the highest measurement frequency of 100 kHz. The charge storage capacity is enhanced in the case of using a nanocrystalline PbS thin film instead of a standard macro-crystalline film
Keywords :
IV-VI semiconductors; composite materials; lead compounds; liquid phase deposited coatings; nanostructured materials; photoconductivity; semiconductor storage; semiconductor thin films; silicon; silicon compounds; 100 kHz; Si-SiO2-PbS; capacitance-voltage measurements; charge storage; chemical bath deposition method; conductance-voltage measurements; heterostructures; macrocrystalline film; memory effects; nanocrystalline thin films; Capacitance measurement; Capacitance-voltage characteristics; Charge measurement; Chemical elements; Current measurement; Density measurement; Doping; Frequency measurement; Hysteresis; Transistors; Heterostructures; Nano-crystalline PbS; Optoelectronics;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.283989
