Annealing Effects on Properties of Ba(Zn1/3Ta2/3)O3 Dielectric Materials

Author

Ioachim, A. ; Toacsan, M.I. ; Banciu, M.G. ; Nedelcu, L. ; Dutu, C.A. ; Andronescu, E. ; Jinga, S.

Author_Institution

Nat. Inst. of Mater. Phys., Bucharest-Magurele

Volume

2

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

253

Lastpage

256

Abstract

Ba(Zn_1/3Ta_2/3)O₃ dielectric materials were prepared by solid state reaction. The samples were sintered at temperatures in the range 1400-1600degC for 4 h. Morphostructural characterization was performed by using SEM and XRD. The dielectric properties were measured in the microwave range (6-7 GHz). An additional annealing at 1400 degC for 10 hours was performed in order to improve the dielectric parameters. The best parameters were achieved for the samples sintered at 1600degC with additional thermal treatment

Keywords

X-ray diffraction; annealing; barium compounds; dielectric materials; high-temperature techniques; microwave materials; scanning electron microscopy; sintering; tantalum compounds; zinc compounds; 10 hrs; 1400 to 1600 C; 4 hrs; 6 to 7 GHz; BaZn_0.33Ta_0.66O₃; SEM; XRD; annealing effects; dielectric materials; morphostructural characterization; sintering; solid state reaction; thermal treatment; Annealing; Dielectric loss measurement; Dielectric losses; Dielectric materials; Dielectric measurements; Powders; Q factor; Solid state circuits; Temperature; X-ray scattering; BZT; microwaves; thermal treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.283990

Filename

4063218