Title :
Annealing Effects on Properties of Ba(Zn1/3Ta2/3)O3 Dielectric Materials
Author :
Ioachim, A. ; Toacsan, M.I. ; Banciu, M.G. ; Nedelcu, L. ; Dutu, C.A. ; Andronescu, E. ; Jinga, S.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest-Magurele
Abstract :
Ba(Zn1/3Ta2/3)O3 dielectric materials were prepared by solid state reaction. The samples were sintered at temperatures in the range 1400-1600degC for 4 h. Morphostructural characterization was performed by using SEM and XRD. The dielectric properties were measured in the microwave range (6-7 GHz). An additional annealing at 1400 degC for 10 hours was performed in order to improve the dielectric parameters. The best parameters were achieved for the samples sintered at 1600degC with additional thermal treatment
Keywords :
X-ray diffraction; annealing; barium compounds; dielectric materials; high-temperature techniques; microwave materials; scanning electron microscopy; sintering; tantalum compounds; zinc compounds; 10 hrs; 1400 to 1600 C; 4 hrs; 6 to 7 GHz; BaZn0.33Ta0.66O3; SEM; XRD; annealing effects; dielectric materials; morphostructural characterization; sintering; solid state reaction; thermal treatment; Annealing; Dielectric loss measurement; Dielectric losses; Dielectric materials; Dielectric measurements; Powders; Q factor; Solid state circuits; Temperature; X-ray scattering; BZT; microwaves; thermal treatment;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.283990
