DocumentCode :
3257803
Title :
The use of extracted BSIM3v3 MOS parameters for quick manual design
Author :
De Carvalho Ferreira, L.H. ; Pimenta, Tales Cleber
Author_Institution :
Univ. Fed. of Itajuba, Brazil
fYear :
2004
fDate :
6-8 Dec. 2004
Firstpage :
612
Lastpage :
615
Abstract :
This work describes a new methodology for the extraction of DC parameters from BSIM3v3 MOS transistors. It takes into account some short channel effects not considered in the simplified level 1 model, thus providing corrections for the traditional MOS transconductance equations gm and go. The parameters are obtained using the minimum square method. The results show that the proposed method improves the precision of manual transistors´ dimensions´ calculations.
Keywords :
CMOS analogue integrated circuits; CMOS digital integrated circuits; integrated circuit design; integrated circuit modelling; least mean squares methods; mixed analogue-digital integrated circuits; BSIM3v3 MOS transistor; CMOS analogue integrated circuits; CMOS digital integrated circuits; MOS transconductance equation; integrated circuit design; integrated circuit modelling; manual transistor dimension calculation; minimum square method; short channel effect; CMOS process; Circuit simulation; Extraterrestrial measurements; MOSFETs; Manufacturing processes; Nonlinear equations; SPICE; Semiconductor device modeling; Transconductance; Vectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on
Print_ISBN :
0-7803-8656-6
Type :
conf
DOI :
10.1109/ICM.2004.1434739
Filename :
1434739
Link To Document :
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