Characterization of Ba0.5Sr0.5TiO3 Thin Films For Tuneable Devices

Author

Ioachim, A. ; Toacsa, M.I. ; Banciu, M.G. ; Nedelcu, L. ; Dutu, C.A. ; Sava, F. ; Popescu, M. ; Scirisoreanu, N. ; Dinescu, M.

Author_Institution

National Inst. of Mater. Phys., Bucharesl-Magurele

Volume

2

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

271

Lastpage

274

Abstract

Barium strontium titanate (BST) bulk ceramic was used as target for PLD thin film deposition. In order to avoid stoichiometry modification during the deposition, a more reactive oxidant ambient in the chamber was produced by using a radiofrequency discharge 13.56 MHz, 150 W. Thin films of stoichiometric BST was deposited on alumina substrate with the thickness between 400 and 500 nm heated at 650degC. An additional annealing was made at 800degC for 6 hours. XRD and SEM were used for sample characterization. Capacity measurements at 100 kHz were performed versus temperature

Keywords

X-ray diffraction; aluminium compounds; annealing; barium compounds; ferroelectric ceramics; ferroelectric thin films; pulsed laser deposition; scanning electron microscopy; strontium compounds; 100 kHz; 13.56 MHz; 150 W; 400 to 500 nm; 6 hrs; 650 C; 800 C; Ba_0.5Sr_0.5TiO₃; PLD thin film deposition; SEM; XRD; alumina substrate; annealing; barium strontium titanate bulk ceramic; radiofrequency discharge; reactive oxidant; stoichiometric BST; stoichiometry modification; tuneable devices; Annealing; Barium; Binary search trees; Ceramics; Radio frequency; Sputtering; Strontium; Substrates; Thin film devices; Titanium compounds; Barium strontium titanate; PLD; film;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.283995

Filename

4063223