Title :
Trap model for GaN RF HEMT power switch
Author :
Pereira, Antonio ; Albahrani, Sayed ; Parker, Anthony ; Heimlich, Michael ; Weste, Neil ; Dunleavy, Larry ; Skidmore, Scott
Author_Institution :
Dept. of Eng., Macquarie Univ., Sydney, NSW, Australia
Abstract :
RF GaN HEMTs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface between gate and drain caused RON modulation while the traps in the bulk beneath the gate plate caused current collapse. A power HEMT model incorporating traps was developed and simulations correctly predicted knee walk out due to increase in the ON resistance and current collapse due to bulk traps.
Keywords :
gallium compounds; high electron mobility transistors; power semiconductor switches; semiconductor device models; wide band gap semiconductors; GaN; ON resistance modulation; RF HEMT power switch; current collapse; power HEMT model; power switches; pulsed IV system; trap effects; trap model; Gallium nitride; HEMTs; Logic gates; Modulation; Resistance; Switches; Voltage measurement; Current Collapse; Dynamic RON; GaN Power Switch; RON modulation; Trap Model; Trapping;
Conference_Titel :
Microwave Measurement Conference, 2013 82nd ARFTG
Conference_Location :
Columbus, OH
DOI :
10.1109/ARFTG-2.2013.6737339