Title :
Simulated Superior Performance of Superjuction Bipolar Transistors
Author :
Antoniou, Marina ; Udrea, Florin
Author_Institution :
Cambridge Univ.
Abstract :
This paper presents for the first time an investigation and comparison of the superjunction IGBT (SJBT) as proposed in (Udrea and Bauer, 2004) and the current state of art field stop IGBT (Laska et al., 2000 and Dewar et al., 2000). Simulation results indicate the superior performance of the superjunction IGBT under switching conditions. For the same conditions, at a collector current density of 100A/cm and on-state voltage 1.6 V the switching off losses for a SJBT and field-stop IGBT are 1 and 4.5 mJ/cm2 respectively
Keywords :
insulated gate bipolar transistors; power semiconductor devices; 1.6 V; field stop IGBT; superjunction IGBT; switching conditions; Anodes; Art; Bipolar transistors; Cathodes; Current density; Doping; Electric breakdown; Insulated gate bipolar transistors; Performance loss; Voltage;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.284001
