• DocumentCode
    3257958
  • Title

    Simulated Superior Performance of Superjuction Bipolar Transistors

  • Author

    Antoniou, Marina ; Udrea, Florin

  • Author_Institution
    Cambridge Univ.
  • Volume
    2
  • fYear
    2006
  • fDate
    27-29 Sept. 2006
  • Firstpage
    293
  • Lastpage
    296
  • Abstract
    This paper presents for the first time an investigation and comparison of the superjunction IGBT (SJBT) as proposed in (Udrea and Bauer, 2004) and the current state of art field stop IGBT (Laska et al., 2000 and Dewar et al., 2000). Simulation results indicate the superior performance of the superjunction IGBT under switching conditions. For the same conditions, at a collector current density of 100A/cm and on-state voltage 1.6 V the switching off losses for a SJBT and field-stop IGBT are 1 and 4.5 mJ/cm2 respectively
  • Keywords
    insulated gate bipolar transistors; power semiconductor devices; 1.6 V; field stop IGBT; superjunction IGBT; switching conditions; Anodes; Art; Bipolar transistors; Cathodes; Current density; Doping; Electric breakdown; Insulated gate bipolar transistors; Performance loss; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International Semiconductor Conference, 2006
  • Conference_Location
    Sinaia
  • Print_ISBN
    1-4244-0109-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2006.284001
  • Filename
    4063229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3257958