DocumentCode :
3257996
Title :
Stabilization of hole transport layer by alternate deposition for organic light-emitting diodes
Author :
Lida, Y. ; Mori, Tatsuo
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Nagoya Univ., Nagoya
fYear :
2008
fDate :
7-11 Sept. 2008
Firstpage :
601
Lastpage :
604
Abstract :
N,N´-di(1-naphthyl)-N,N´-diphenyl-(1,1´-biphenyl) 4,4´-diamine (NPD) is often used as a hole-transport material in organic light-emitting diodes (OLEDs). The polycrystallization of organic films in OLEDs is thought to be one of the degradation factors of the device performance. It is found that the generation and growth of polycrystalline region in NPD film can be efficiently suppressed by alternate deposition method. The generation of polycrystalline region in the alternate structure specimen depends on the top layer material. The OLEDs having alternate hole-transport layer have the similar initial EL properties as the OLEDs having organic alloy and only NPD hole-transport layer.
Keywords :
crystallisation; organic compounds; organic light emitting diodes; stability; thin films; N,N´-di(1-naphthyl)-N,N´-diphenyl-(1,1´-biphenyl)-4,4´-diamine; OLED; alternate deposition; hole transport layer; organic films; organic light-emitting diodes; polycrystallization; stabilization; Atomic force microscopy; Crystalline materials; Crystallization; Electrodes; Indium tin oxide; Measurement units; Organic light emitting diodes; Organic materials; Polarization; Thermal degradation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulating Materials, 2008. (ISEIM 2008). International Symposium on
Conference_Location :
Mie
Print_ISBN :
978-4-88686-005-7
Electronic_ISBN :
978-4-88686-006-4
Type :
conf
DOI :
10.1109/ISEIM.2008.4664480
Filename :
4664480
Link To Document :
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