• DocumentCode
    3257996
  • Title

    Stabilization of hole transport layer by alternate deposition for organic light-emitting diodes

  • Author

    Lida, Y. ; Mori, Tatsuo

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Nagoya Univ., Nagoya
  • fYear
    2008
  • fDate
    7-11 Sept. 2008
  • Firstpage
    601
  • Lastpage
    604
  • Abstract
    N,N´-di(1-naphthyl)-N,N´-diphenyl-(1,1´-biphenyl) 4,4´-diamine (NPD) is often used as a hole-transport material in organic light-emitting diodes (OLEDs). The polycrystallization of organic films in OLEDs is thought to be one of the degradation factors of the device performance. It is found that the generation and growth of polycrystalline region in NPD film can be efficiently suppressed by alternate deposition method. The generation of polycrystalline region in the alternate structure specimen depends on the top layer material. The OLEDs having alternate hole-transport layer have the similar initial EL properties as the OLEDs having organic alloy and only NPD hole-transport layer.
  • Keywords
    crystallisation; organic compounds; organic light emitting diodes; stability; thin films; N,N´-di(1-naphthyl)-N,N´-diphenyl-(1,1´-biphenyl)-4,4´-diamine; OLED; alternate deposition; hole transport layer; organic films; organic light-emitting diodes; polycrystallization; stabilization; Atomic force microscopy; Crystalline materials; Crystallization; Electrodes; Indium tin oxide; Measurement units; Organic light emitting diodes; Organic materials; Polarization; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulating Materials, 2008. (ISEIM 2008). International Symposium on
  • Conference_Location
    Mie
  • Print_ISBN
    978-4-88686-005-7
  • Electronic_ISBN
    978-4-88686-006-4
  • Type

    conf

  • DOI
    10.1109/ISEIM.2008.4664480
  • Filename
    4664480