DocumentCode
3257996
Title
Stabilization of hole transport layer by alternate deposition for organic light-emitting diodes
Author
Lida, Y. ; Mori, Tatsuo
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Nagoya Univ., Nagoya
fYear
2008
fDate
7-11 Sept. 2008
Firstpage
601
Lastpage
604
Abstract
N,N´-di(1-naphthyl)-N,N´-diphenyl-(1,1´-biphenyl) 4,4´-diamine (NPD) is often used as a hole-transport material in organic light-emitting diodes (OLEDs). The polycrystallization of organic films in OLEDs is thought to be one of the degradation factors of the device performance. It is found that the generation and growth of polycrystalline region in NPD film can be efficiently suppressed by alternate deposition method. The generation of polycrystalline region in the alternate structure specimen depends on the top layer material. The OLEDs having alternate hole-transport layer have the similar initial EL properties as the OLEDs having organic alloy and only NPD hole-transport layer.
Keywords
crystallisation; organic compounds; organic light emitting diodes; stability; thin films; N,N´-di(1-naphthyl)-N,N´-diphenyl-(1,1´-biphenyl)-4,4´-diamine; OLED; alternate deposition; hole transport layer; organic films; organic light-emitting diodes; polycrystallization; stabilization; Atomic force microscopy; Crystalline materials; Crystallization; Electrodes; Indium tin oxide; Measurement units; Organic light emitting diodes; Organic materials; Polarization; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulating Materials, 2008. (ISEIM 2008). International Symposium on
Conference_Location
Mie
Print_ISBN
978-4-88686-005-7
Electronic_ISBN
978-4-88686-006-4
Type
conf
DOI
10.1109/ISEIM.2008.4664480
Filename
4664480
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