• DocumentCode
    3257999
  • Title

    Pentacene Organic Mosfets with Au and Pt Bottom Contacts

  • Author

    Anghel, C. ; Manolescu, A. ; Ionescu, A.M.

  • Volume
    2
  • fYear
    2006
  • fDate
    27-29 Sept. 2006
  • Firstpage
    301
  • Lastpage
    304
  • Abstract
    This work reports on the fabrication and characterization of the organic thin film transistors OTFTs. Pentacene transistors are fabricated in bottom S/D contact configurations on preoxidized Si wavers. Two different metals - Pt, Au - are used for the contacts. Similar performances are reported for Au and Pt bottom contact devices. It is revealed that the pentacene deposition rate critically influences the morphology of the film and the transistor performances. Special test structures revealed that the carrier conduction takes place only in the organic layer
  • Keywords
    MOSFET; gold; organic semiconductors; platinum; Au; MOSFET; Pt; Si; bottom contact devices; carrier conduction; organic layer; organic thin film transistors; pentacene deposition rate; pentacene transistors; Fabrication; Gold; Lithography; MOSFETs; Organic thin film transistors; Pentacene; Substrates; Surface treatment; Testing; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International Semiconductor Conference, 2006
  • Conference_Location
    Sinaia
  • Print_ISBN
    1-4244-0109-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2006.284003
  • Filename
    4063231