DocumentCode
3257999
Title
Pentacene Organic Mosfets with Au and Pt Bottom Contacts
Author
Anghel, C. ; Manolescu, A. ; Ionescu, A.M.
Volume
2
fYear
2006
fDate
27-29 Sept. 2006
Firstpage
301
Lastpage
304
Abstract
This work reports on the fabrication and characterization of the organic thin film transistors OTFTs. Pentacene transistors are fabricated in bottom S/D contact configurations on preoxidized Si wavers. Two different metals - Pt, Au - are used for the contacts. Similar performances are reported for Au and Pt bottom contact devices. It is revealed that the pentacene deposition rate critically influences the morphology of the film and the transistor performances. Special test structures revealed that the carrier conduction takes place only in the organic layer
Keywords
MOSFET; gold; organic semiconductors; platinum; Au; MOSFET; Pt; Si; bottom contact devices; carrier conduction; organic layer; organic thin film transistors; pentacene deposition rate; pentacene transistors; Fabrication; Gold; Lithography; MOSFETs; Organic thin film transistors; Pentacene; Substrates; Surface treatment; Testing; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
International Semiconductor Conference, 2006
Conference_Location
Sinaia
Print_ISBN
1-4244-0109-7
Type
conf
DOI
10.1109/SMICND.2006.284003
Filename
4063231
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