Experimental Drain I-V Characteristics of Power MOS Transistors and the Nature of Reverse Leakage Current of Oxide Passivated PN Junctions

Author

Obreja, Vasile V N ; Podaru, Cecilia ; Manea, Elena ; Coraci, Antonie ; Codreanu, Cecilia

Author_Institution

National R & D Inst. for Microtechnology, Bucharest

Volume

2

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

305

Lastpage

308

Abstract

Drain electrical characteristics for a 10 A and 400V MOS transistor have been measured and analyzed. At junction temperature as high as 200 degC and above this value, accentuated rise of the drain reverse (blocking) current takes place before the specified voltage of 400 V is reached, due to current leakage at the cells junction edge. Observed constant drain current, attributed to a primary diffusion current component is not undoubted evidence for the location of this current in the junction bulk. Similar behavior is observed when bias voltage below the threshold voltage is applied on the gate. Oxide-passivated junctions from bipolar devices may behave like those from MOSFETs at high temperature

Keywords

leakage currents; power MOSFET; 10 A; 200 C; 400 V; MOSFET; bipolar devices; drain electrical characteristics; oxide passivated pn junctions; power MOS transistors; reverse leakage current; Current measurement; Electric variables; Electric variables measurement; Leakage current; MOSFETs; Power measurement; Research and development; Silicon; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.284004

Filename

4063232