DocumentCode
3258045
Title
On-State Behaviour of Diamond M-i-P Structures
Author
Brezeanu, Mihai ; Rashid, S.J. ; Amaratunga, G.A.J. ; Rupesinghe, N.L. ; Butler, T. ; Udrea, F. ; Brezeanu, G.
Author_Institution
Dept. of Eng., Cambridge Univ.
Volume
2
fYear
2006
fDate
27-29 Sept. 2006
Firstpage
311
Lastpage
314
Abstract
Diamond Schottky power diodes are currently subject to extensive research. In this paper, the on-state capability of this type of structures is assessed. Measured forward characteristics for different temperatures are included and the use of gold, nickel and aluminium as Schottky metal is evaluated. A theoretical study regarding the influence of different doping profiles at the drift-substrate interface on the electrical performance of the device is also inserted
Keywords
MIS structures; Schottky diodes; diamond; doping profiles; wide band gap semiconductors; M-i-P structures; Schottky metal; aluminium; diamond Schottky power diodes; doping profiles; drift-substrate interface; gold; nickel; Conductivity; Frequency; Gold; P-i-n diodes; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
International Semiconductor Conference, 2006
Conference_Location
Sinaia
Print_ISBN
1-4244-0109-7
Type
conf
DOI
10.1109/SMICND.2006.284006
Filename
4063234
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