DocumentCode :
3258062
Title :
Photogenerated Currents in Pentacene Field Effect Transistors
Author :
Plugaru, R. ; Anghel, C. ; Ionescu, A.M.
Author_Institution :
Nat. Inst. for R&D in Microtechnol., IMT-Bucharest, Bucharest
Volume :
2
fYear :
2006
fDate :
27-29 Sept. 2006
Firstpage :
315
Lastpage :
318
Abstract :
This paper reports on organic FET transistors (OFETs) fabricated on silicon substrates using pentacene as active organic layer and gold as source and drain contacts. Photogenerated currents by a 625nm wavelength laser are experimentally observed. The observed light-induced increase of OFFT drain current by three-to-six orders of magnitude, depending on device operation and geometry suggests their potential for future light sensing applications. Bipolar conduction and electron trapping in pentacene films exposed to light are found responsible for some of the abnormal observed behaviors during experiments
Keywords :
field effect transistors; organic semiconductors; semiconductor thin films; 625 nm; bipolar conduction; drain current; electron trapping; gold; laser; light sensing applications; organic FET transistors; pentacene films; photogenerated currents; silicon substrates; source and drain contacts; Circuit testing; Costs; FETs; Fiber lasers; Gold; OFETs; Pentacene; Semiconductor lasers; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
Type :
conf
DOI :
10.1109/SMICND.2006.284007
Filename :
4063235
Link To Document :
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