Off - State Performances of Ideal Schottky Barrier Diodes (SBD) on Diamond and Silicon Carbide

Author

Brezeanu, G. ; Visoreanu, A. ; Brezeanu, M. ; Udrea, F. ; Amaratunga, G.A.J. ; Enache, I. ; Rusu, I. ; Draghici, F.

Author_Institution

Politehnica Univ. of Bucharest

Volume

2

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

319

Lastpage

322

Abstract

Extensive numerical simulations have been carried out to compare the electrical performance of ideal Schottky diodes on diamond and silicon carbide. The influences of the drift layer parameters on the off-state behaviour of the diodes are presented for both punch-through (PT) and non punch-through (nPT) structures. In PT case breakdown voltage was shown to be constant with the drift doping at low concentrations. Analytical expressions of the breakdown voltage variation with doping for nPT diodes are also included

Keywords

Schottky diodes; diamond; power semiconductor devices; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; Schottky barrier diodes; SiC; breakdown voltage variation; diamond; drift doping; drift layer parameters; electrical performance; non punch-through structures; off-state behaviour; punch-through structure; silicon carbide; Doping; Electric breakdown; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature dependence; Temperature sensors; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.284008

Filename

4063236