DocumentCode :
3258413
Title :
Physically based models of high power semiconductor devices for PSpice
Author :
Schroder, Stephan ; De Doncker, Rik W.
Author_Institution :
Inst. for Power Electron. & Electr. Drives, Tech. Hochschule Aachen, Germany
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
379
Abstract :
For the design of efficient and reliable converters, circuit simulation can be a powerful tool, if suitable semiconductor models exist. Unfortunately most of the commercially available circuit simulators do not have accurate models for high power semiconductors. Therefore, new device models are developed for power diodes and GTO-thyristors. They are based on semiconductor physics, which guarantees a wide range of validity. The models are programmed in the C++ language and are implemented in the widely used circuit simulator Microsim PSpice using the device equation options. The simulation results are compared with measurements
Keywords :
SPICE; power semiconductor diodes; semiconductor device models; thyristors; C++ language; GTO-thyristors; Microsim PSpice circuit simulator; PSpice; device equation options; high power semiconductor devices; power diodes; Anodes; Charge carrier processes; Circuit simulation; Computational modeling; Differential equations; Physics; Power electronics; Power semiconductor devices; SPICE; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location :
Phoenix, AZ
ISSN :
0197-2618
Print_ISBN :
0-7803-5589-X
Type :
conf
DOI :
10.1109/IAS.1999.799984
Filename :
799984
Link To Document :
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