Title :
The Three Valued Logic Implementation on a Hybrid SOI Structure
Author :
Ravariu, Cristian ; Zoltan, Hascsi ; Ravariu, Florina ; Dobrescu, Lidia
Author_Institution :
Fac. of Electron., Politehnica Univ. of Bucharest
Abstract :
Diamond versus silicon gives a higher threshold voltage, due to its wider band gap. For a logic application this means pushing up the 1 -st logic level toward a 2-nd logic level on DOI device. A hybrid structure both with silicon and diamond on insulator opens the door toward the three valued logic with very stable states for 0-level, 1-level and 2-level. In digital circuits is very important to have distinct and stable logic levels. The individuality of logic levels is ensured by two different materials: silicon and diamond
Keywords :
MISFET; diamond; digital circuits; logic circuits; silicon; silicon-on-insulator; DOI device; MISFET; Si; diamond on insulator; digital circuits; hybrid SOI structure; silicon on insulator; three valued logic implementation; threshold voltage; Combinational circuits; Digital circuits; Humans; Insulation; Logic circuits; Logic devices; MOSFETs; Multivalued logic; Silicon on insulator technology; Threshold voltage; MISFET; SOI / DOI structures; basic 3-valued functions;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.284036