• DocumentCode
    3258622
  • Title

    The Three Valued Logic Implementation on a Hybrid SOI Structure

  • Author

    Ravariu, Cristian ; Zoltan, Hascsi ; Ravariu, Florina ; Dobrescu, Lidia

  • Author_Institution
    Fac. of Electron., Politehnica Univ. of Bucharest
  • Volume
    2
  • fYear
    2006
  • fDate
    27-29 Sept. 2006
  • Firstpage
    425
  • Lastpage
    428
  • Abstract
    Diamond versus silicon gives a higher threshold voltage, due to its wider band gap. For a logic application this means pushing up the 1 -st logic level toward a 2-nd logic level on DOI device. A hybrid structure both with silicon and diamond on insulator opens the door toward the three valued logic with very stable states for 0-level, 1-level and 2-level. In digital circuits is very important to have distinct and stable logic levels. The individuality of logic levels is ensured by two different materials: silicon and diamond
  • Keywords
    MISFET; diamond; digital circuits; logic circuits; silicon; silicon-on-insulator; DOI device; MISFET; Si; diamond on insulator; digital circuits; hybrid SOI structure; silicon on insulator; three valued logic implementation; threshold voltage; Combinational circuits; Digital circuits; Humans; Insulation; Logic circuits; Logic devices; MOSFETs; Multivalued logic; Silicon on insulator technology; Threshold voltage; MISFET; SOI / DOI structures; basic 3-valued functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International Semiconductor Conference, 2006
  • Conference_Location
    Sinaia
  • Print_ISBN
    1-4244-0109-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2006.284036
  • Filename
    4063264