DocumentCode
3258622
Title
The Three Valued Logic Implementation on a Hybrid SOI Structure
Author
Ravariu, Cristian ; Zoltan, Hascsi ; Ravariu, Florina ; Dobrescu, Lidia
Author_Institution
Fac. of Electron., Politehnica Univ. of Bucharest
Volume
2
fYear
2006
fDate
27-29 Sept. 2006
Firstpage
425
Lastpage
428
Abstract
Diamond versus silicon gives a higher threshold voltage, due to its wider band gap. For a logic application this means pushing up the 1 -st logic level toward a 2-nd logic level on DOI device. A hybrid structure both with silicon and diamond on insulator opens the door toward the three valued logic with very stable states for 0-level, 1-level and 2-level. In digital circuits is very important to have distinct and stable logic levels. The individuality of logic levels is ensured by two different materials: silicon and diamond
Keywords
MISFET; diamond; digital circuits; logic circuits; silicon; silicon-on-insulator; DOI device; MISFET; Si; diamond on insulator; digital circuits; hybrid SOI structure; silicon on insulator; three valued logic implementation; threshold voltage; Combinational circuits; Digital circuits; Humans; Insulation; Logic circuits; Logic devices; MOSFETs; Multivalued logic; Silicon on insulator technology; Threshold voltage; MISFET; SOI / DOI structures; basic 3-valued functions;
fLanguage
English
Publisher
ieee
Conference_Titel
International Semiconductor Conference, 2006
Conference_Location
Sinaia
Print_ISBN
1-4244-0109-7
Type
conf
DOI
10.1109/SMICND.2006.284036
Filename
4063264
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