DocumentCode
3258768
Title
Studies on H2 O-based Al2 O3 deposited on as-grown CVD graphene
Author
Wenrong Wang ; Chen Liang ; Tie Li ; Yuelin Wang
Author_Institution
State Key Labs. of Transducer Technol., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
fYear
2013
fDate
26-30 Aug. 2013
Firstpage
5
Lastpage
8
Abstract
In this paper, graphene films were synthesized by chemical vapor deposition. Raman spectra and transmission electron microscope indicated the graphene films were few-layer. Al2O3 films were grown directly onto the surface of graphene transferred on SiO2/Si by H2O-based atomic layer deposition method. Experiments revealed that the distribution of physically adsorbed H2O molecules on the surface of graphene decided the morphology of Al2O3 film, and the O/Al ratio was close to stoichiometric condition of 1.5.
Keywords
Raman spectra; aluminium compounds; atomic layer deposition; chemical vapour deposition; graphene; thin films; transmission electron microscopy; C; CVD; H2O-Al2O3; Raman spectra; atomic layer deposition; chemical vapor deposition; graphene films; physically adsorbed molecules; transmission electron microscopy; Aluminum oxide; Atomic layer deposition; Decision support systems; Graphene; Silicon; Al2O3; atomic layer deposition (ALD); chemical vapor deposition (CVD); graphene;
fLanguage
English
Publisher
ieee
Conference_Titel
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2013 International Conference on
Conference_Location
Suzhou
Print_ISBN
978-1-4799-1210-0
Type
conf
DOI
10.1109/3M-NANO.2013.6737390
Filename
6737390
Link To Document