Growth of porous InP: Transition from three to two dimensional structures

Author

Zhankun Weng ; An´gang Yuan ; Weixun Mi ; Wendan Zhang ; Cuiting Wu ; Zuobin Wang

Author_Institution

Centre for Nano Metrol. & Manuf. Technol., Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2013

fDate

26-30 Aug. 2013

Firstpage

393

Lastpage

396

Abstract

We present the transition state of porous InP from three to two dimensions, which is explored during electrochemical etching at constant current density in NaCl solutions on n-InP(100) wafers. The `node´ of the three dimensional structure revealed by scanning electron microscopy are consistent with the oscillatory periods, and that the smooth curve is corresponding to the uniformly vertical pores along with the <;001> direction. In addition, the onset and end of the oscillations shift ahead of times with increasing current densities. Furthermore, the transition of porous InP was discussed based on the surface curvature, the diffusion-control, and the reactive heat.

Keywords

III-V semiconductors; current density; electrochemistry; etching; indium compounds; porous semiconductors; scanning electron microscopy; semiconductor growth; surface diffusion; surface structure; <;001> direction; InP; current density; diffusion-control; electrochemical etching; n-InP(100) wafers; oscillation shift; oscillatory periods; porous material; reactive heat; scanning electron microscopy; surface curvature; three-dimensional structure; transition state; Correlation; Current density; Etching; Indium phosphide; Oscillators; Scanning electron microscopy; Three-dimensional displays; Electrochemical etching; Oscillatory behavior; Porous InP; Transition;

fLanguage

English

Publisher

ieee

Conference_Titel

Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2013 International Conference on

Conference_Location

Suzhou

Print_ISBN

978-1-4799-1210-0

Type

conf

DOI

10.1109/3M-NANO.2013.6737393

Filename

6737393