Simple Parameter Extraction Algorithms for a Precise Mosfet Model

In MOS modeling, the region between subthreshold and strong inversion, called moderate inversion region, has received little attention. Conventional models like BSIM or EKV are using mathematical smoothing functions to model the moderate inversion. As the supply voltages are scaled down, this region becomes an increasingly larger fraction in the overall operation bias of MOSFETs. Because of this, the smoothing junctions for moderate inversion increased in complexity and in number of parameters. The surface potential based models are solving this problem by increasing the physical content of the model, thus using a small number of parameters. This paper proposes to present one such model and the extraction procedures for its parameters