Title :
Study Of Integration Issues Of Ti Salicide Process With Preamorphization For Sub-0.18 /spl mu/m Gate Length CMOS Technologies
Author :
Kittl, J.A. ; Chatterjee, A. ; Chen, I.C. ; Dixit, G.A. ; Apte, P.P. ; Prinslow, D.A. ; Hong, Q.Z.
Keywords :
CMOS process; CMOS technology; Contact resistance; Implants; Rapid thermal processing; Silicides; Space exploration; Space technology; Temperature; Thermal resistance;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-4131-7
DOI :
10.1109/VTSA.1997.614719
