Title :
Optical switching in semiconductor photonic band gap structures
Author :
Nefedov, I.S. ; Gusyatnikov, V.N. ; Morozov, Yu A.
Author_Institution :
Inst. of Radio Eng. & Electron., Acad. of Sci., Russia
Abstract :
We study optical and electrooptical switching and modulation in one-dimensional semiconductor photonic band gap structures, provided by light-induced generation of non-equilibrium free charge carriers and excitons in a semiconductor
Keywords :
III-V semiconductors; aluminium compounds; electro-optical effects; electro-optical modulation; electro-optical switches; excitons; gallium arsenide; photoelectricity; photonic band gap; 1D semiconductor photonic band gap structures; GaAs-GaAlAs; electrooptical modulation; electrooptical switching; excitons; light-induced generation; nonequilibrium free charge carriers; optical modulation; optical switching; Charge carriers; Gallium arsenide; Lighting control; Nonlinear optics; Optical control; Optical modulation; Optical refraction; Optical switches; Optical variables control; Photonic band gap;
Conference_Titel :
Transparent Optical Networks, 2001. Proceedings of 2001 3rd International Conference on
Conference_Location :
Cracow
Print_ISBN :
0-7803-7096-1
DOI :
10.1109/ICTON.2001.934769
