Title :
Etching of p-type metal contact deposited on GaAs
Author :
Mahmood, Zahid Hasan ; Bashar, Shabbir A.
Author_Institution :
Dept. of Appl. Phys. & Electron., Dhaka Univ., Bangladesh
Abstract :
In this paper, both wet etching and dry etching of metal contacts deposited on GaAs wafer have been described. A ~240 nm thin layer of p-type contact was formed on GaAs bulk wafer using Au-Zn-Au layer. Wet etching of the metal contact was done using KI-I2 and HNO3-HCl etch solutions and the dry etching was performed in an argon plasma reactive ion etcher chamber. Results are discussed for both the etching processes
Keywords :
III-V semiconductors; electrical contacts; gallium arsenide; semiconductor technology; sputter etching; Ar; Au-Zn-Au; GaAs; HNO3-HCl; III V semiconductor; KI-I2; argon plasma reactive ion etcher chamber; bulk wafer; dry etching; etch solutions; metal contacts; p-type metal contact etching; wet etching; Annealing; Contact resistance; Dry etching; Gallium arsenide; Nitrogen; Semiconductor lasers; Surface emitting lasers; Thermal resistance; Waveguide lasers; Wet etching;
Conference_Titel :
Transparent Optical Networks, 2001. Proceedings of 2001 3rd International Conference on
Conference_Location :
Cracow
Print_ISBN :
0-7803-7096-1
DOI :
10.1109/ICTON.2001.934779
