Title :
The effect of some geometric and packaging process parameters on die metallization failure
Author :
Tay, A.A.O. ; Ong, S.H. ; Lim, Y.K.
Author_Institution :
Centre for IC Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
fDate :
27 Nov-1 Dec 1995
Abstract :
This paper describes an experimental and finite element study of the effect of some geometric and packaging process parameters on die metallization failure during temperature cycling. The geometric parameters studied include die size, die offset, voided die attach and metal-line width, while process parameters include molding temperature, molding pressure and moisture preconditioning. A test chip designed to detect passivation and interlayer dielectric cracking was used to determine the locations on the die where metallization failures occurred. Three-dimensional finite element analyses were performed to determine the stress distribution within the package during temperature cycling. A good correlation between areas of high stress and occurrence of metallization failures was obtained
Keywords :
failure analysis; finite element analysis; integrated circuit metallisation; integrated circuit packaging; die metallization failure; geometric parameters; interlayer dielectric cracking; moisture preconditioning; molding; packaging; passivation; stress distribution; temperature cycling; three-dimensional finite element analysis; Dielectrics; Finite element methods; Metallization; Microassembly; Moisture; Packaging; Passivation; Stress; Temperature; Testing;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the
Print_ISBN :
0-7803-2797-7
DOI :
10.1109/IPFA.1995.487590