Title :
Switching characteristics of NPT- and PT-IGBTs under zero-voltage switching conditions
Author :
Song, Byeong-Mun ; Zhu, Huibin ; Lai, Jih-Sheng ; Hefner, Allen R., Jr.
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
In this paper, switching characteristics of nonpunch through (NPT) and punch through (PT) insulated gate bipolar transistors (IGBTs) are evaluated under zero-voltage switching (ZVS) conditions. Through the physics-based modeling and experiments, the interaction between the external circuit and the physical IGBT internal model under ZVS operation is evaluated. The effects of the external snubber capacitor on the turn-off tail current are modeled and analyzed with the Saber circuit simulator. The turn-on switching characteristics are evaluated for the study of switching losses. This study provides guidelines for designing IGBTs that are suitable for soft switching and for selection of appropriate snubbing capacitors in soft-switching inverter and converter applications
Keywords :
capacitors; circuit simulation; insulated gate bipolar transistors; invertors; power convertors; power semiconductor switches; snubbers; IGBT internal model; NPT-IGBT; PT-IGBT; Saber circuit simulator; ZVS; external circuit; external snubber capacitor; nonpunch through IGBT; punch through IGBT; snubbing capacitors; soft-switching converter; soft-switching inverter; switching characteristics; switching losses; turn-off tail current; turn-on switching characteristics; zero-voltage switching; Analytical models; Circuit simulation; Guidelines; Insulated gate bipolar transistors; Inverters; Snubbers; Switched capacitor circuits; Switching loss; Tail; Zero voltage switching;
Conference_Titel :
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
0-7803-5589-X
DOI :
10.1109/IAS.1999.800029
