• DocumentCode
    3259280
  • Title

    Long photon lifetime from microdisk cavity laser with type II GaSb/GaAs quantum dots

  • Author

    Hsu, K.S. ; Chang, C.C. ; Lin, W.H. ; Shih, M.H. ; Lin, S.Y. ; Chang, Y.C.

  • Author_Institution
    Res. Center for Appl. Sci. (RCAS), Taipei, Taiwan
  • fYear
    2013
  • fDate
    8-10 July 2013
  • Firstpage
    25
  • Lastpage
    26
  • Abstract
    Microdisk lasers with active region made of type II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. Lasing wavelengths near 1μm was achieved and longer photon lifetime from type II structure also observed.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; laser cavity resonators; microdisc lasers; quantum dot lasers; GaAs; GaAs substrate; GaSb-GaAs; laser active region; lasing wavelengths; long photon lifetime; microdisk cavity laser; type 11 quantum dots; type 11 structure; Gallium arsenide; Lasers; Pulse measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Society Summer Topical Meeting Series, 2013 IEEE
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    978-1-4673-5059-4
  • Type

    conf

  • DOI
    10.1109/PHOSST.2013.6614449
  • Filename
    6614449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3259280