DocumentCode :
3259280
Title :
Long photon lifetime from microdisk cavity laser with type II GaSb/GaAs quantum dots
Author :
Hsu, K.S. ; Chang, C.C. ; Lin, W.H. ; Shih, M.H. ; Lin, S.Y. ; Chang, Y.C.
Author_Institution :
Res. Center for Appl. Sci. (RCAS), Taipei, Taiwan
fYear :
2013
fDate :
8-10 July 2013
Firstpage :
25
Lastpage :
26
Abstract :
Microdisk lasers with active region made of type II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. Lasing wavelengths near 1μm was achieved and longer photon lifetime from type II structure also observed.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; laser cavity resonators; microdisc lasers; quantum dot lasers; GaAs; GaAs substrate; GaSb-GaAs; laser active region; lasing wavelengths; long photon lifetime; microdisk cavity laser; type 11 quantum dots; type 11 structure; Gallium arsenide; Lasers; Pulse measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2013 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4673-5059-4
Type :
conf
DOI :
10.1109/PHOSST.2013.6614449
Filename :
6614449
Link To Document :
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