• DocumentCode
    3259304
  • Title

    Transition metal doped metal oxide nanostructures synthesized by arc discharge method

  • Author

    Fang, Fang ; Kennedy, Jessie ; Futter, John ; Markwitz, A. ; Manikandan, E.

  • Author_Institution
    Nat. Isotope Centre, GNS Sci., Lower Hutt, New Zealand
  • fYear
    2013
  • fDate
    26-30 Aug. 2013
  • Firstpage
    220
  • Lastpage
    223
  • Abstract
    Doping metal oxides with metallic impurities has been the subject of previous studies for enhanced sensing performance. In this paper, we present a review on syntheses of transition metal doped metal oxide nanostructures using arc discharge method. Tungsten oxide was doped with Palladium, Scandium and Vanadium, respectively. Nickel was chosen to dope Zinc oxide by arc discharge method. It is demonstrated that dopants not only change the morphology of metal oxide nanostructures but also help to achieve an improved electrical conductivity. Because it is easy to tailor the morphology by adjusting the arc discharge parameters and dopant can be prescribed in the preparation of the anode material, the arc discharge is considered to be a fast and inexpensive synthesis method for doping which can be used to produce high quality doped metal oxide nanostructures for chemical sensing measurements.
  • Keywords
    doping; electrical conductivity; nanofabrication; nanostructured materials; nickel; palladium; scandium; surface morphology; tungsten compounds; vanadium; zinc compounds; WO3:Pd; WO3:Sc; WO3:V; ZnO:Ni; arc discharge method; arc discharge parameters; doping; electrical conductivity; metallic impurities; morphological properties; transition metal doped metal oxide nanostructures; Arc discharges; Materials; Morphology; Nanostructures; Sensors; Zinc oxide; arc discharge; metal oxide nanostructure; transition metal;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2013 International Conference on
  • Conference_Location
    Suzhou
  • Print_ISBN
    978-1-4799-1210-0
  • Type

    conf

  • DOI
    10.1109/3M-NANO.2013.6737418
  • Filename
    6737418