Title :
Intelligent defect localization methodology through the use of photoemission spectral analysis
Author :
Seon Seo, Jeong ; Sik Lee, Sang ; Su Choe, Cheol ; Don Hong, Ki ; Daniel, Sabbas ; Ku Yoon, Cheong
Author_Institution :
Samsung Electron., Kyungki, South Korea
fDate :
27 Nov-1 Dec 1995
Abstract :
Point defects in CMOS circuits may generate single or multiple emission spots, not necessarily coincident with the physical defect. In this study we show how photoemission spectrum analysis (PSA) is used to discount secondary emissions. Spectrum-based defect layer judgements enable intelligent, targeted etch-back decisions. The feasibility of performing backside PSA analysis is also discussed
Keywords :
CMOS integrated circuits; failure analysis; integrated circuit measurement; photoemission; spectral analysis; CMOS circuits; backside PSA analysis; defect localization methodology; multiple emission spots; photoemission spectral analysis; secondary emissions; single emission spots; spectrum-based defect layer judgements; targeted etch-back decisions; Band pass filters; Diodes; Failure analysis; Instruments; MOS devices; MOSFETs; Photoelectricity; Silicon; Spectral analysis; Testing;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the
Print_ISBN :
0-7803-2797-7
DOI :
10.1109/IPFA.1995.487594
