Intelligent defect localization methodology through the use of photoemission spectral analysis

Author

Seon Seo, Jeong ; Sik Lee, Sang ; Su Choe, Cheol ; Don Hong, Ki ; Daniel, Sabbas ; Ku Yoon, Cheong

Author_Institution

Samsung Electron., Kyungki, South Korea

fYear

1995

fDate

27 Nov-1 Dec 1995

Firstpage

49

Lastpage

54

Abstract

Point defects in CMOS circuits may generate single or multiple emission spots, not necessarily coincident with the physical defect. In this study we show how photoemission spectrum analysis (PSA) is used to discount secondary emissions. Spectrum-based defect layer judgements enable intelligent, targeted etch-back decisions. The feasibility of performing backside PSA analysis is also discussed

Keywords

CMOS integrated circuits; failure analysis; integrated circuit measurement; photoemission; spectral analysis; CMOS circuits; backside PSA analysis; defect localization methodology; multiple emission spots; photoemission spectral analysis; secondary emissions; single emission spots; spectrum-based defect layer judgements; targeted etch-back decisions; Band pass filters; Diodes; Failure analysis; Instruments; MOS devices; MOSFETs; Photoelectricity; Silicon; Spectral analysis; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the

Print_ISBN

0-7803-2797-7

Type

conf

DOI

10.1109/IPFA.1995.487594

Filename

487594