DocumentCode
3259341
Title
Electrical Characteristics Of Ti-salicided N-mosfets With Asymmetric Source/drain Regions
Author
Lee, Jaesung ; Kim, Kwangsoo ; Han, Jinsu ; Kim, Jaegab ; Park, Hunsub
fYear
1997
fDate
3-5 June 1997
Firstpage
34
Lastpage
36
Keywords
CMOS technology; Contact resistance; Electric resistance; Electric variables; Electrical resistance measurement; Geometry; MOSFET circuits; Sputter etching; Testing; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location
Taipei, Taiwan
ISSN
1524-766X
Print_ISBN
0-7803-4131-7
Type
conf
DOI
10.1109/VTSA.1997.614721
Filename
614721
Link To Document