DocumentCode :
3259341
Title :
Electrical Characteristics Of Ti-salicided N-mosfets With Asymmetric Source/drain Regions
Author :
Lee, Jaesung ; Kim, Kwangsoo ; Han, Jinsu ; Kim, Jaegab ; Park, Hunsub
fYear :
1997
fDate :
3-5 June 1997
Firstpage :
34
Lastpage :
36
Keywords :
CMOS technology; Contact resistance; Electric resistance; Electric variables; Electrical resistance measurement; Geometry; MOSFET circuits; Sputter etching; Testing; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-4131-7
Type :
conf
DOI :
10.1109/VTSA.1997.614721
Filename :
614721
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3259341
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