Hot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETs

Author

Lou, C.L. ; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.

Author_Institution

Centre for IC Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore

fYear

1995

fDate

27 Nov-1 Dec 1995

Firstpage

86

Lastpage

90

Abstract

Hot-carrier injection is shown to degrade the subthreshold operation of LDD PMOSFETs. Hot-carrier injection is observed to increasingly degrade the subthreshold leakage and subthreshold slope as the LDD PMOSFETs are scaled to smaller dimensions. A physical model, based on the channel shortening effect of degraded PMOSFETs, is used to model the degradation characteristics observed. Degradation in the subthreshold characteristics of PMOSFETs is expected to limit the life of PMOSFETs as its channel length is reduced to half-a-micrometer

Keywords

MOSFET; hot carriers; leakage currents; semiconductor device models; semiconductor device reliability; LDD PMOSFETs; channel length; channel shortening effect; hot-carrier induced degradation; physical model; semiconductor device reliability; subthreshold characteristics; subthreshold leakage; subthreshold slope; Degradation; Failure analysis; Hot carrier effects; Hot carrier injection; Hot carriers; MOSFETs; Semiconductor device modeling; Semiconductor device reliability; Subthreshold current; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the

Print_ISBN

0-7803-2797-7

Type

conf

DOI

10.1109/IPFA.1995.487601

Filename

487601