DocumentCode
3259494
Title
Effect of oxide field on hot carrier induced degradation in CMOS gate oxide
Author
Zhao, S.P. ; Taylor, Stephen
Author_Institution
Inst. of Microelectron., Nat. Univ. of Singapore, Singapore
fYear
1995
fDate
27 Nov-1 Dec 1995
Firstpage
91
Lastpage
95
Abstract
In this study, substrate hot electron injection (SHE) experiments have been carried out on n-MOSFETs. The effects of the oxide field on the hot electron induced degradation has been studied systematically. The oxide field dependence of the trapping over the field range from 0.5 to 6 MV/cm for different injection levels has been investigated
Keywords
MOSFET; electron traps; hot carriers; semiconductor device reliability; CMOS gate oxide; hot carrier induced degradation; injection levels; n-MOSFETs; oxide field; substrate hot electron injection; trapping; Charge carrier processes; Degradation; Electron traps; Hot carriers; MOS devices; MOSFETs; Microelectronics; Substrate hot electron injection; Tunneling; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the
Print_ISBN
0-7803-2797-7
Type
conf
DOI
10.1109/IPFA.1995.487602
Filename
487602
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