Title :
Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane
Author :
Ishii, Keisuke ; Isshiki, Daisuke ; Karasawa, Toshifumi ; Ohki, Yoshimichi
Author_Institution :
Dept. of Electr. Eng., Waseda Univ., Tokyo, Japan
Abstract :
In the present study, in order to estimate the intrinsic breakdown strength precisely, the self-healing technique was used with 1 μs-width pulse voltages. The effect of point defects on the intrinsic breakdown strength is discussed based on the knowledge of optical properties obtained with synchrotron radiation
Keywords :
defect absorption spectra; dielectric thin films; electric breakdown; electric strength; infrared spectra; photoluminescence; plasma CVD; silicon compounds; ultraviolet spectra; vacancies (crystal); 1 mus; PECVD; SiO2; dielectric breakdown; intrinsic breakdown strength; optical properties; plasma-enhanced chemical vapor deposition; point defects; pulse voltages; self-healing technique; synchrotron radiation; tetraethoxysilane; Chemical vapor deposition; Dielectric breakdown; Electromagnetic wave absorption; Etching; Luminescence; Mass spectroscopy; Optical films; Plasma chemistry; Plasma measurements; Plasma temperature;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1995. ICSD'95., Proceedings of the 1995 IEEE 5th International Conference on
Conference_Location :
Leicester
Print_ISBN :
0-7803-2040-9
DOI :
10.1109/ICSD.1995.523068
