• DocumentCode
    3259556
  • Title

    Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

  • Author

    Ishii, Keisuke ; Isshiki, Daisuke ; Karasawa, Toshifumi ; Ohki, Yoshimichi

  • Author_Institution
    Dept. of Electr. Eng., Waseda Univ., Tokyo, Japan
  • fYear
    1995
  • fDate
    10-13 Jul 1995
  • Firstpage
    656
  • Lastpage
    660
  • Abstract
    In the present study, in order to estimate the intrinsic breakdown strength precisely, the self-healing technique was used with 1 μs-width pulse voltages. The effect of point defects on the intrinsic breakdown strength is discussed based on the knowledge of optical properties obtained with synchrotron radiation
  • Keywords
    defect absorption spectra; dielectric thin films; electric breakdown; electric strength; infrared spectra; photoluminescence; plasma CVD; silicon compounds; ultraviolet spectra; vacancies (crystal); 1 mus; PECVD; SiO2; dielectric breakdown; intrinsic breakdown strength; optical properties; plasma-enhanced chemical vapor deposition; point defects; pulse voltages; self-healing technique; synchrotron radiation; tetraethoxysilane; Chemical vapor deposition; Dielectric breakdown; Electromagnetic wave absorption; Etching; Luminescence; Mass spectroscopy; Optical films; Plasma chemistry; Plasma measurements; Plasma temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Conduction and Breakdown in Solid Dielectrics, 1995. ICSD'95., Proceedings of the 1995 IEEE 5th International Conference on
  • Conference_Location
    Leicester
  • Print_ISBN
    0-7803-2040-9
  • Type

    conf

  • DOI
    10.1109/ICSD.1995.523068
  • Filename
    523068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3259556