Study on the dielectric properties of Ag doped ZnO by “Universal Power Law”

Author

Yin, G.L. ; Li, J.Y. ; Li, S.T. ; Cheng, P.F.

Author_Institution

State Key Lab. of Electr. Insulation & Power Equip., Xi´´an Jiaotong Univ., Xi´´an

fYear

2008

fDate

7-11 Sept. 2008

Firstpage

207

Lastpage

210

Abstract

It was found that the dependence of the breakdown field E_1mA and the activation energy, on Ag content are similar to that of the exponent of alpha_lf in low frequency region and alpha_hf in high frequency region on Ag content, which is a novel result in the research of varistor materials. By means of normalization of conductivity, it was found that samples with different Ag contents show similar mechanism of dielectric loss, which is suggested as the relaxation process of electron in deep level traps. The relation of ac conductivity of samples and scaling frequency shows a deviation from the master curve at high frequencies, which is due to different distribution of local energy barriers and the dynamics of mobile carriers. The results can be fully understood by means of ldquoUniversal Power Law(UPL)rdquo.

Keywords

II-VI semiconductors; deep levels; dielectric losses; dielectric relaxation; electric breakdown; silver; wide band gap semiconductors; zinc compounds; ZnO:Ag; ac conductivity; breakdown field; deep level traps; dielectric loss; dielectric properties; relaxation process; universal power law; Conducting materials; Conductivity; Dielectric losses; Dielectric materials; Electric breakdown; Electrons; Frequency; Hafnium; Varistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulating Materials, 2008. (ISEIM 2008). International Symposium on

Conference_Location

Mie

Print_ISBN

978-4-88686-005-7

Electronic_ISBN

978-4-88686-006-4

Type

conf

DOI

10.1109/ISEIM.2008.4664569

Filename

4664569