Title :
MOS transistor gate oxide breakdown stress dependence and their related models
Author :
Yeoh, Teong-San ; Nair, Remesh Seth ; Hu, She-Jer
Author_Institution :
Intel Technol., Penang, Malaysia
fDate :
27 Nov-1 Dec 1995
Abstract :
MOS transistor gate oxide breakdown is a common failure mechanism seen in the semiconductor industry. This paper deals with the various factors which affect gate oxide breakdown, i.e. influence of frequency, duty cycle and voltage on the transistor gate. Gate oxide breakdown models are also presented
Keywords :
MOSFET; electric breakdown; electron traps; failure analysis; semiconductor device models; semiconductor device reliability; MOS transistor gate oxide; breakdown models; duty cycle; failure mechanism; frequency; gate oxide breakdown; oxide breakdown stress dependence; transistor gate voltage; Breakdown voltage; Electric breakdown; Electron traps; Failure analysis; Frequency; MOSFETs; Physics; Pulse generation; Stress; Trade agreements;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the
Print_ISBN :
0-7803-2797-7
DOI :
10.1109/IPFA.1995.487609
