A new interlayer dielectric (ILD) cracking mechanism in ceramic packaged multilayered CMOS devices

Author

Hong, Yeoh Eng ; Kean, Chong Aik ; Tay, Martin

Author_Institution

Intel Technol., Penang, Malaysia

fYear

1995

fDate

27 Nov-1 Dec 1995

Firstpage

132

Lastpage

134

Abstract

A new interlayer dielectric (ILD) cracking mechanism was uncovered in a multilayered CMOS technology. This new mechanism was found in ceramic packaged ICs and differs from the well known thermal cycling induced thin-film cracking (TFC) found in plastic packaged ICs. It is shown that the driving force for this new mechanism is a combination of wire bonding stress and wide metal bus layout. A new TFC design specification was developed to prevent the recurrence of the same mechanism on subsequent hermetic packaged products. The reliability impact of this cracking mechanism is reported and investigated in this paper

Keywords

CMOS integrated circuits; cracks; dielectric thin films; failure analysis; integrated circuit packaging; integrated circuit reliability; ceramic packaged devices; design specification; hermetic packaged product; interlayer dielectric cracking mechanism; multilayered CMOS devices; reliability; thin-film cracking; wide metal bus layout; wire bonding stress; Bonding forces; Bonding processes; CMOS technology; Ceramics; Dielectric devices; Dielectric thin films; Plastic packaging; Seals; Stress; Surface cracks;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the

Print_ISBN

0-7803-2797-7

Type

conf

DOI

10.1109/IPFA.1995.487610

Filename

487610