Plasma damage study using fully processed MOS transistors

MOS transistors with different antenna ratios were used to study plasma etching damage in this work. Electrical techniques that can only be used in MOS transistors, such as transconductance noise measurements, charge pumping measurements, and gate induced drain leakage measurements (GIDL) were employed to study plasma damage at the gate edges. Experiments were also performed to determine hot carrier reliability, and the results indicate the importance of plasma induced damage for actual device operation