Title :
Design for and the control of the channel and 1/f noise in GaAs MESFET´s
Author :
Yan, K.T. ; Forbes, L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fDate :
27 Nov-1 Dec 1995
Abstract :
A model is given for the channel noise coefficient of FETs operating in the saturation region. Some approximations are made for hot electron effects which can be incorporated into the derivation and accounted for by a simple numerical technique. These are then compared to experimental results. We have also developed a formula for the 1/f noise corner frequency for GaAs MESFETs. The formula is based on a new theory where the 1/f noise is a bulk phenomena with localized high frequency variations and long range low frequency fluctuations of carrier concentrations in the substrate with the lowest frequency constrained only by the thickness of the material. Comprehensive and new models with matching experimental data for both channel noise and 1/f noise of the GaAs MESFETs are presented. These can provide both design and testing guidelines for devices in GaAs integrated circuits which are required to meet noise and reliability specifications
Keywords :
1/f noise; III-V semiconductors; Schottky gate field effect transistors; carrier density; equivalent circuits; gallium arsenide; hot carriers; semiconductor device models; semiconductor device noise; semiconductor device reliability; 1/f noise control; 1/f noise corner frequency; GaAs; GaAs MESFET; carrier concentrations; channel noise coefficient; channel noise control; hot electron effects; models; reliability; saturation region; Circuit testing; Constraint theory; Electrons; FETs; Fluctuations; Frequency; Gallium arsenide; Integrated circuit noise; Low-frequency noise; MESFETs;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the
Print_ISBN :
0-7803-2797-7
DOI :
10.1109/IPFA.1995.487617
