Title :
IGBT power semiconductor reliability analysis for traction application
Author :
Jacob, Peter ; Held, Marcel ; Scacco, Paolo
Author_Institution :
Swiss Federal Inst. of Technol., Zurich, Switzerland
fDate :
27 Nov-1 Dec 1995
Abstract :
IGBT (Insulated Gate Bipolar Transistor) power semiconductor modules become of importance for traction applications. However, the reliability of these power modules is still a concern, compared to those of press-packed GTOs. Although first IGBT-press-pack solutions have been presented to the market, IGBT-presspacking remains difficult and expensive. Besides this, customers prefer module technology solutions, because of their economical advantage and easiness of device mounting. Reliability tests have been developed and modules have been analyzed to judge critical reliability points and to show ways for improvement
Keywords :
insulated gate bipolar transistors; modules; power bipolar transistors; semiconductor device reliability; traction; IGBT power semiconductor modules; reliability analysis; traction applications; Failure analysis; Insulated gate bipolar transistors; Manufacturing; Multichip modules; Packaging; Semiconductor device reliability; Shearing; Temperature; Testing; Thermal resistance;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the
Print_ISBN :
0-7803-2797-7
DOI :
10.1109/IPFA.1995.487618
