Title :
Ionic current investigation in silicon nanochannels with molecular dynamics simulations
Author :
Yinghua Qiu ; Jian Ma ; Weichuan Guo ; Wei Si ; Qiyan Tan ; Yunfei Chen
Author_Institution :
Jiangsu Key Lab. for Design & Manuf. of Micro-Nano Biomed. Instrum., Southeast Univ., Nanjing, China
Abstract :
Through the molecular dynamics simulations, the ionic currents in physically realistic nanochannels with consideration of the thermal motion of channel walls are observed. It is found that the ionic current changes a little as the surface charge density increases from 0 to -0.3C/m2 with a huge decrease at -0.3C/m2 when the electric filed strength is 0.25V/nm. The Cl-ion current shows a decrease-increase profile as the surface charge density increases, while there is an increase-decrease trend in the Na+ ion current with the turning point at -0.075C/m2. By the statistic of the concentration and velocity distributions, the location of Na+ ions which provide main contribution to the current moves from the center of the channel to the charged surface as surface charge density increases from 0 to -0.225C/m2. The two parts included in current carriers have different concentrations and mobility. So the different contributions of the two parts Na+ ions and Cl-ions cause the feature of ionic current.
Keywords :
carrier mobility; elemental semiconductors; ion mobility; molecular dynamics method; nanostructured materials; silicon; surface charging; Cl- ion current; Na+ ion current; Si; channel walls; concentration distributions; current carriers; decrease-increase profile; electric filed strength; ionic current investigation; mobility; molecular dynamics simulations; physically realistic nanochannels; silicon nanochannels; surface charge density; thermal motion; velocity distributions; Aggregates; Electric potential; Electrostatics; Force; Ions; Nanobioscience; Silicon; Ionic current; molecular dynamics simulations; silicon nanochannel;
Conference_Titel :
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2013 International Conference on
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1210-0
DOI :
10.1109/3M-NANO.2013.6737442