Title :
The next generation microelectronics craft technique: Nanoimprint lithography
Author :
Jiang Wei ; Wang Nan ; Yan Wei ; Hu Song ; Pu Xiao-Qiong
Author_Institution :
Inst. of Opt. & Electron., Chengdu, China
Abstract :
Transfer of graphics is achieved by optical lithography for several decades in semiconductor process. The production capacity of 45 nm node has been formed. But now semiconductor industry is difficult to be developed according to the Moore law because of the inherent limitations of optical lithography. Now electron-beam directwriting, X-ray exposure and nanoimprint technology are the main technologies for next generation graphics transfer technology. Nanoimprint technology has the advantages of high yield, lowcost and simple process. This paper introduced the traditional nanoimprint technology and its development, including the principle, applications and challenges.
Keywords :
electron beams; integrated circuits; nanolithography; photolithography; soft lithography; Moore law; X-ray exposure; electron-beam directwriting; nanoimprint lithography; next generation graphics transfer technology; next generation microelectronics craft technique; optical lithography; production capacity; semiconductor industry; semiconductor process; size 45 nm; Embossing; Graphics; Lithography; Nanoscale devices; Polymers; Printing; Substrates; Hot embossing lithography (HEL); Nanoimprint lithography (NIL); Ultraviolet nanoimprint lithography (UV-NIL);
Conference_Titel :
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2013 International Conference on
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1210-0
DOI :
10.1109/3M-NANO.2013.6737445