Title :
Oxidation of copper leadframe
Author :
Ang, G.L. ; Goh, L.C. ; Heng, K.W. ; Lahiri, S.K.
Author_Institution :
SGS-Thomson Microelectron., Singapore
fDate :
27 Nov-1 Dec 1995
Abstract :
Delamination of the oxide film from copper alloy leadframes is considered a serious reliability problem for microelectronics packages. In an effort to identify the factors which may lead to the formation of brittle and/or poorly adhering oxides, kinetics of oxidation of leadframes in air was investigated by measuring the oxide thickness as a function of time at temperatures ranging from 200 to 300°C. The oxidation was found to occur fairly rapidly in this temperature range. Analysis of the data indicates a logarithmic growth law in the 100-1400 nm thickness range, and an activation energy which is much smaller than that reported for the oxidation of unalloyed copper by a diffusion mechanism. The results of this investigation is presented here indicating the important role of defects in the oxidation of leadframe
Keywords :
copper alloys; delamination; integrated circuit packaging; oxidation; 200 to 300 C; Cu-CuO; activation energy; adherence; brittleness; copper alloy leadframe; defects; delamination; kinetics; microelectronics package; oxidation; oxide film; reliability; Copper alloys; Delamination; Kinetic theory; Lead compounds; Microelectronics; Oxidation; Packaging; Temperature distribution; Thickness measurement; Time measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the
Print_ISBN :
0-7803-2797-7
DOI :
10.1109/IPFA.1995.487626
