DocumentCode :
3260294
Title :
Fluorine Penetration Suppression By Applying Amorphous Silicon In Wsi Gate Process
Author :
Wang, Han-Ching ; Shih, Chun-Hsing ; Jang, Wen-Yueh
fYear :
1997
fDate :
3-5 Jun 1997
Firstpage :
50
Lastpage :
51
Keywords :
Amorphous silicon; Annealing; CMOS process; Capacitance-voltage characteristics; Contact resistance; Controllability; Design for quality; Etching; Semiconductor films; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
ISSN :
1524-766X
Print_ISBN :
0-7803-4131-7
Type :
conf
DOI :
10.1109/VTSA.1997.614725
Filename :
614725
Link To Document :
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