DocumentCode :
326059
Title :
In-flight and ground testing of single event upset sensitivity in static RAMs
Author :
Johansson, K. ; Dyreklev, Peter ; Granbom, Bo ; Calvet, M. Catherine ; Fourtine, Stephane ; Feuillatre, Odile
Author_Institution :
Ericsson Saab Avionics AB, Linkoping, Sweden
fYear :
1997
fDate :
15-19 Sep 1997
Firstpage :
584
Lastpage :
588
Abstract :
This paper presents the results from in-flight measurements of single event upsets (SEU) in static random access memories (SRAM) caused by the atmospheric radiation environment at aircraft altitudes. The memory devices were carried on commercial airlines at high altitude and mainly high latitudes. The SEUs were monitored by a Component Upset Test Equipment (CUTE), designed for this experiment. The in flight results are compared to ground based testing with neutrons from three different sources
Keywords :
SRAM chips; avionics; cosmic ray interactions; integrated circuit testing; neutron effects; SRAM; aircraft semiconductor electronics; atmospheric radiation environment; component upset test equipment; cosmic ray neutron irradiation; ground testing; in-flight testing; single event upset; static random access memory; Aerospace electronics; Aircraft; Atmospheric measurements; Neutrons; Random access memory; Read-write memory; SRAM chips; Single event upset; Test equipment; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
Type :
conf
DOI :
10.1109/RADECS.1997.699010
Filename :
699010
Link To Document :
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