• DocumentCode
    3260597
  • Title

    Area optimization for leakage reduction and thermal stability in nanometer scale technologies

  • Author

    Ku, Ja Chun ; Ismail, Yehea

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL
  • fYear
    2006
  • fDate
    24-27 Jan. 2006
  • Abstract
    Traditionally, minimum possible area of a VLSI layout is considered the best for delay and power minimization due to decreased interconnect capacitance. This paper shows however that the use of minimum area does not result in the minimum power and/or delay in nanometer scale technologies due to thermal effects, and in some cases, may result in thermal runaway. A methodology using area as a design parameter to reduce the leakage power, and prevent thermal runaway is presented. A 16-bit adder example in a 70nm technology shows a total power savings of 17% with 15% increase in area, and no increase in delay. The power savings using this technique are expected to increase in future technologies
  • Keywords
    VLSI; adders; delays; integrated circuit interconnections; integrated circuit layout; nanoelectronics; thermal stability; 16 bit; 70 nm; VLSI layout; area optimization; delay minimization; interconnect capacitance; leakage power reduction; nanometer scale technology; power minimization; thermal effects; thermal runaway prevention; thermal stability; Capacitance; Delay effects; Integrated circuit interconnections; Semiconductor device modeling; Subthreshold current; Temperature; Thermal resistance; Thermal stability; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation, 2006. Asia and South Pacific Conference on
  • Conference_Location
    Yokohama
  • Print_ISBN
    0-7803-9451-8
  • Type

    conf

  • DOI
    10.1109/ASPDAC.2006.1594687
  • Filename
    1594687