DocumentCode
3260597
Title
Area optimization for leakage reduction and thermal stability in nanometer scale technologies
Author
Ku, Ja Chun ; Ismail, Yehea
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL
fYear
2006
fDate
24-27 Jan. 2006
Abstract
Traditionally, minimum possible area of a VLSI layout is considered the best for delay and power minimization due to decreased interconnect capacitance. This paper shows however that the use of minimum area does not result in the minimum power and/or delay in nanometer scale technologies due to thermal effects, and in some cases, may result in thermal runaway. A methodology using area as a design parameter to reduce the leakage power, and prevent thermal runaway is presented. A 16-bit adder example in a 70nm technology shows a total power savings of 17% with 15% increase in area, and no increase in delay. The power savings using this technique are expected to increase in future technologies
Keywords
VLSI; adders; delays; integrated circuit interconnections; integrated circuit layout; nanoelectronics; thermal stability; 16 bit; 70 nm; VLSI layout; area optimization; delay minimization; interconnect capacitance; leakage power reduction; nanometer scale technology; power minimization; thermal effects; thermal runaway prevention; thermal stability; Capacitance; Delay effects; Integrated circuit interconnections; Semiconductor device modeling; Subthreshold current; Temperature; Thermal resistance; Thermal stability; Threshold voltage; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation, 2006. Asia and South Pacific Conference on
Conference_Location
Yokohama
Print_ISBN
0-7803-9451-8
Type
conf
DOI
10.1109/ASPDAC.2006.1594687
Filename
1594687
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