DocumentCode
3260918
Title
Semiconductor membrane photonic devices for ultra-low power consumption operation
Author
Arai, Shigehisa ; Nishiyama, Naoto ; Amemiya, Tomohiro ; Shindo, Takatoshi ; Jieun Lee ; Futami, Mitsuaki ; Kyohei Doi ; Hiratani, Takuo
Author_Institution
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan
fYear
2013
fDate
8-10 July 2013
Firstpage
48
Lastpage
49
Abstract
Our research activities of GaInAsP/InP lateral current injection semiconductor membrane lasers and related devices intended for on-chip optical interconnects are reviewed and remaining issues to be solved for ultra-low power consumption operation are discussed.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical interconnections; power consumption; semiconductor lasers; GaInAsP-InP; lateral current injection semiconductor membrane lasers; on-chip optical interconnects; semiconductor membrane photonic devices; ultralow power consumption operation; Cavity resonators; Modulation; Power demand; Pump lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Summer Topical Meeting Series, 2013 IEEE
Conference_Location
Waikoloa, HI
Print_ISBN
978-1-4673-5059-4
Type
conf
DOI
10.1109/PHOSST.2013.6614533
Filename
6614533
Link To Document