DocumentCode :
3260918
Title :
Semiconductor membrane photonic devices for ultra-low power consumption operation
Author :
Arai, Shigehisa ; Nishiyama, Naoto ; Amemiya, Tomohiro ; Shindo, Takatoshi ; Jieun Lee ; Futami, Mitsuaki ; Kyohei Doi ; Hiratani, Takuo
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan
fYear :
2013
fDate :
8-10 July 2013
Firstpage :
48
Lastpage :
49
Abstract :
Our research activities of GaInAsP/InP lateral current injection semiconductor membrane lasers and related devices intended for on-chip optical interconnects are reviewed and remaining issues to be solved for ultra-low power consumption operation are discussed.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical interconnections; power consumption; semiconductor lasers; GaInAsP-InP; lateral current injection semiconductor membrane lasers; on-chip optical interconnects; semiconductor membrane photonic devices; ultralow power consumption operation; Cavity resonators; Modulation; Power demand; Pump lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2013 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4673-5059-4
Type :
conf
DOI :
10.1109/PHOSST.2013.6614533
Filename :
6614533
Link To Document :
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