• DocumentCode
    3261018
  • Title

    Overcoming SiN film stress limitations for high quality factor ring resonators

  • Author

    Luke, Kevin ; Poitras, Carl B. ; Lipson, Michal

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    2013
  • fDate
    8-10 July 2013
  • Firstpage
    64
  • Lastpage
    65
  • Abstract
    We overcome stress limitations of thick SiN films using termination trenches to isolate the device area from crack propagation. We measure an unprecedented quality factor of 6.5 million in a high confinement SiN ring resonator.
  • Keywords
    Q-factor; crack-edge stress field analysis; optical films; optical resonators; silicon compounds; SiN; SiN film stress limitations; crack propagation; quality factor; ring resonators; termination trenches; Films; Optical ring resonators; Optical sensors; Q-factor; Silicon; Silicon compounds; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Society Summer Topical Meeting Series, 2013 IEEE
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    978-1-4673-5059-4
  • Type

    conf

  • DOI
    10.1109/PHOSST.2013.6614541
  • Filename
    6614541
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3261018