DocumentCode :
3261018
Title :
Overcoming SiN film stress limitations for high quality factor ring resonators
Author :
Luke, Kevin ; Poitras, Carl B. ; Lipson, Michal
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear :
2013
fDate :
8-10 July 2013
Firstpage :
64
Lastpage :
65
Abstract :
We overcome stress limitations of thick SiN films using termination trenches to isolate the device area from crack propagation. We measure an unprecedented quality factor of 6.5 million in a high confinement SiN ring resonator.
Keywords :
Q-factor; crack-edge stress field analysis; optical films; optical resonators; silicon compounds; SiN; SiN film stress limitations; crack propagation; quality factor; ring resonators; termination trenches; Films; Optical ring resonators; Optical sensors; Q-factor; Silicon; Silicon compounds; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2013 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4673-5059-4
Type :
conf
DOI :
10.1109/PHOSST.2013.6614541
Filename :
6614541
Link To Document :
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